1、功能说明
    1、读写擦NAND Flash IS34ML01G081-TLI

2、使用环境

    软件开发环境：KEIL MDK-ARM V5.25
                  IAR EWARM 8.50.1
    硬件开发环境：
        基于评估板N32H497VEL7_STB V1.0开发
		
3、使用说明
    
    系统配置:
        1、FEMC时钟源：AHB
        2、串口配置：
                    - 串口为USART1（TX：PA9  RX：PA10）:
                    - 数据位：8
                    - 停止位：1
                    - 奇偶校验：无
                    - 波特率： 115200
        3、GPIO配置：
                D0:PD14     D1:PD15     D2:PD0      D3:PD1
                D4:PE7      D5:PE8      D6:PE9      D7:PE10
                NOE:PD4     NWE:PD5     CLE:PD11    ALE:PD12
                NCE:PG9     NWAIT:PD6
        
    使用方法：
        编译后烧录到评估板，上电，串口打印NAND Flash ID和读写擦结果

4、注意事项
    开发板上没有Nand-Flash，需要外接
    

1. Function description
    Read, write and erase NAND Flash IS34ML01G081-TLI

2. Use environment

    Software development environment: KEIL MDK-ARM V5.25
                                      IAR EWARM 8.50.1

    Hardware development environment:
        Developed based on the evaluation board N32H497VEL7_STB V1.0

3. Instructions for use

    System configuration:
        1. FEMC clock source: AHB
        2. Serial port configuration:
                            - Serial port: USART1 (TX: PA9 RX: PA10) :
                            - Data bit: 8
                            - Stop bit: 1
                            - Parity check: None
                            - Baud rate: 115200
        3.GPIO configuration：
                D0:PD14     D1:PD15     D2:PD0      D3:PD1
                D4:PE7      D5:PE8      D6:PE9      D7:PE10
                NOE:PD4     NWE:PD5     CLE:PD11    ALE:PD12
                NCE:PG9     NWAIT:PD6

    Instructions:
        After compiling, burn it to the evaluation board, power it on, and print the NAND Flash read-write-erase results through the serial port

4. Attention
    There is no Nand-Flash on the development board, it needs to be connected externally

